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luna@powerwaywafer.com
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2020-03-17
2020-03-09
Material X Thickness (nm) Dopant Doping concentration InP 1000 N (Sulfur) 3.00E+16 In(x)GaAs 0.53 3000 U/D 5.00E+14 InP 500 N (Sulfur) 3.00E+16 Substrate SI (Fe)