qui nous sommes

en tant que fabricant principal de matériau semi-conducteur composé en Chine. pam-xiamen développe des technologies avancées de croissance cristalline et d'épitaxie, allant de la première génération de plaquettes de germanium, deuxième génération d'arséniure de gallium avec croissance de substrat et3
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après plus de 20 ans d'accumulation et de développement, notre entreprise a un avantage évident dans l'innovation technologique et le bassin de talents. à l'avenir, nous devons accélérer le rythme des actions concrètes pour fournir aux clients de meilleurs produits et services
docteur chan -PDG de xiamen powerway avancé matériel co., ltd

nos produits

laser bleu

gan templates

Les gabarits de pam-xiamen sont constitués de couches cristallines de nitrure de gallium (gan), de nitrure d'aluminium (aln), de nitrure d'aluminium gallium (algan) et de nitrure d'indium et de gallium (ingan) déposées sur des substrats de saphir, Les produits modèles en carbure de silicium ou silicium.pam-xiamen permettent des durées de cycle d'ép3

Gan sur silicium

substrat de gan autoportant

pam-xiamen a établi la technologie de fabrication de la plaquette de substrat gan (nitrure de gallium) autoportante, qui est pour uhb-led et ld. développé par la technologie d'épitaxie en phase vapeur (hvpe), notre substrat gan a une faible densité de défauts.

gaas cristal

galettes de gaas (arséniure de gallium)

pwam développe et fabrique des substrats semi-conducteurs composés de cristaux d'arséniure de gallium et wafer.we a utilisé une technologie avancée de croissance cristalline, congélation verticale gradient (vgf) et gaas gaufrage technologie de traitement, établi une ligne de production de croissance de cristal, de coupe, de broyage à polissage une 3

cristal de sic

sic épitaxie

nous fournissons une épitaxie sic sur film mince (carbure de silicium) sur des substrats de 6h ou 4h pour le développement de dispositifs en carbure de silicium. sic epi wafer est principalement utilisé pour les diodes schottky, les transistors à effet de champ à semi-conducteur à oxyde de métal, les transistors à effet de champ de jonction, les tr3

cristal de sic

substrat sic

pam-xiamen propose des plaquettes de carbure de silicium semi-conducteur, 6h sic et 4h sic dans différentes qualités pour le chercheur et les fabricants de l'industrie. nous avons développé la technologie de croissance de cristal de sic et la technologie de traitement de gaufrette de cristal de sic, établi une ligne de production au substrat sic fa3

gan expitaxy

gaufrette épitaxiale menée basée par gan

La plaquette épitaxiale à base de gan (nitrure de gallium) de pam-xiamen est destinée à l'application de diodes électroluminescentes bleues et vertes à très haute luminosité (led) et de diodes laser (ld).

gan hemt epitaxy

gaufrette épitaxiale de gan hemt

Les nitrures de gallium (gan) (transistors à haute mobilité d'électrons) sont la prochaine génération de transistors de puissance. Grâce à la technologie gan, pam-xiamen offre maintenant une plaquette algan / gan hemt epi sur saphir ou silicone, et algan / gan sur saphir .

cristal de sic

sic plaquette reclaim

pam-xiamen est en mesure d'offrir les services suivants de plaquettes de récupération de sic.

Pourquoi nous choisir

  • support technique gratuit et professionnel

    vous pouvez obtenir notre service de technologie libre de l'enquête à après service basé sur notre 25+ expériences dans la ligne de semi-conducteur.

  • bon service de vente

    notre objectif est de répondre à toutes vos exigences, peu importe comment les petites commandes et comment les questions difficiles ils peuvent être, pour maintenir une croissance soutenue et rentable pour chaque client grâce à nos produits qualifiés et un service satisfaisant.

  • 25+ années d'expériences

    avec plus de 25 + ans expériences Dans le domaine des matériaux semi-conducteurs composés et l'exportation, notre équipe peut vous assurer que nous pouvons comprendre vos besoins et traiter votre projet de manière professionnelle.

  • qualité fiable

    la qualité est notre première priorité. pam-xiamen a été iso9001: 2008 , possède et partage quatre facettes modernes qui peuvent fournir une gamme assez large de produits qualifiés pour répondre aux différents besoins de nos clients, et chaque commande doit être traitée par notre système de qualité 3

"Nous avons utilisé les wafers powerway epi pour certains de nos travaux. Nous sommes très impressionnés par la qualité de l'epi"
james s.speck, département des matériaux université de californie
2018-01-25
"chères équipes de pam-xiamen, merci pour l'avis de votre profession, le problème a été résolu, nous sommes si heureux d'être votre partenaire"
raman k. chauhan, seren photonique
2018-01-25
"merci pour la réponse rapide de mes questions et le prix concurrentiel, il est très utile pour nous, nous commanderons bientôt"
markus sieger, université d'ulm
2018-01-25
"Les plaquettes de carbure de silicium sont arrivées aujourd'hui, et nous en sommes vraiment ravis, bravo à votre équipe de production!"
dennis, université d'exeter
2018-01-25

les universités et les entreprises les plus célèbres du monde nous font confiance

dernières nouvelles

The contact and photoconductivity characteristics between Co doped amorphous carbon and GaAs: n-type low-resistivity and semi-insulated high-resistivity GaAs

2019-06-17

The Co doped amorphous carbon films (a-C:Co), deposited by pulsed laser deposition, show p-n and ohmic contact characteristics with n-type low resistivity GaAs (L-GaAs) and semi-insulated high-resistivity GaAs (S-GaAs). The photosensitivity enhances for a-C:Co/L-GaAs, while inverse decreases for a-C:Co/S-GaAs heterojunction, respectively. Furthermore, the enhanced photosensitivity for the a-C:Co/L-GaAs/Ag heterojunction also shows deposition temperature dependence behavior, and the optimum deposition temperature is around 500 °C. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Realization and characterization of thin single crystal Ge films on sapphire

2019-06-13

We have successfully produced and characterized thin single crystal Ge films on sapphire substrates (GeOS). Such a GeOS template offers a cost-effective alternative to bulk germanium substrates for applications where only a thin (<2 µm) Ge layer is needed for device operation. The GeOS templates have been realized using the Smart CutTM technique. 100 mm diameter GeOS templates have been manufactured and characterized to compare the Ge thin film properties with bulk Ge. Surface defect inspection, SEM, AFM, defect etching, XRD and Raman spectroscopy were all performed. The results obtained for each characterization technique used have highlighted that the material properties of the transferred thin Ge film were very close to the ones of a bulk Ge reference. An epitaxial AlGaInP/GaInP/AlGaInP double heterostructure was grown atop the GeOS template to demonstrate the template's stability under the conditions encountered in typical device realization. The photoluminescent behavior of thi...

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Optical nonlinearity characteristics of crystalline InSb semiconductor thin films

2019-06-04

The intensity-dependent nonlinear absorption and refraction characteristics of crystalline InSb thin films are investigated by z-scan method at 405 nm laser wavelength. Results show that the nonlinear absorption coefficient of crystalline InSb thin films is in the order of ~ + 10−2 m W−1, and the nonlinear refractive index is in the order of ~ + 10−9 m2 W−1. Variable-temperature ellipsometric spectroscopy measurements and electronic process analyses as well as theoretical calculations are employed to discuss the internal mechanisms responsible for the giant optical nonlinearity. Analysis results indicate that the nonlinear absorption mainly stems from the laser-induced free-carrier absorption effect, whereas the nonlinear refraction is mainly from thermal effect due to band gap shrinking and carrier effect due to the transition process of electrons, respectively. These characteristics may be responsible for the super-resolution effect in nano-optical information storage. Source:IOPscie...

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Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

2019-05-27

This paper proposes a double epi-layers 4H–SiC junction barrier Schottky rectifier (JBSR) with embedded P layer (EPL) in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage (BV) and low specific on-resistance (Ron,sp). The influences of device parameters, such as the depth of the embedded P+ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga's figure of merit (BFOM) is increased by 67.9% compared to a conventional 4H–SiC JBSR. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@p...

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Growth of InP directly on Si by corrugated epitaxial lateral overgrowth

2019-05-23

In an attempt to achieve an InP–Si heterointerface, a new and generic method, the corrugated epitaxial lateral overgrowth (CELOG) technique in a hydride vapor phase epitaxy reactor, was studied. An InP seed layer on Si (0 0 1) was patterned into closely spaced etched mesa stripes, revealing the Si surface in between them. The surface with the mesa stripes resembles a corrugated surface. The top and sidewalls of the mesa stripes were then covered by a SiO2 mask after which the line openings on top of the mesa stripes were patterned. Growth of InP was performed on this corrugated surface. It is shown that growth of InP emerges selectively from the openings and not on the exposed silicon surface, but gradually spreads laterally to create a direct interface with the silicon, hence the name CELOG. We study the growth behavior using growth parameters. The lateral growth is bounded by high index boundary planes of {3 3 1} and {2 1 1}. The atomic arrangement of these planes, crystallographic o...

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Charge transport performance of high resistivity CdZnTe crystals doped with In/Al

2019-05-13

To evaluate the charge transport properties of as-grown high resistivity CdZnTe crystals doped with In/Al, the α particle spectroscopic response was measured using an un-collimated 241Am (5.48 MeV) radioactive source at room temperature. The electron mobility lifetime products (μτ)e of the CdZnTe crystals were predicted by fitting plots of photo-peak position versus electrical field strength using the single carrier Hecht equation. A TOF technique was employed to evaluate the electron mobility for CdZnTe crystals. The mobility was obtained by fitting the electron drift velocities as a function of the electrical field strengths, where the drift velocities were achieved by analyzing the rise-time distributions of the voltage pulses formed by a preamplifier. A fabricated CdZnTe planar detector based on a low In concentration doped CdZnTe crystal with (μτ)e = 2.3 × 10−3 cm2/V and μe = 1000 cm2/(V dot m s), respectively, exhibits an excellent γ-ray spectral resolution of 6.4% (FWHM = 3.8 ke...

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Selective-area growth of GaN on non- and semi-polar bulk GaN substrates

2019-05-09

We carried out the selective-area growth of GaN and fabricated InGaN/GaN MQWs on non- and semi-polar bulk GaN substrates by MOVPE. The differences in the GaN structures and the In incorporation of InGaN/GaN MQWs grown on non- and semi-polar GaN substrates were investigated. In the case of selective-area growth, different GaN structures were obtained on GaN,  GaN, and GaN substrates. A repeating pattern of  and  facets appeared on  GaN. Then, we fabricated InGaN/GaN MQWs on the facet structures on  GaN. The emission properties characterized by cathodoluminescence were different for  and  facets. On the other hand, for InGaN/GaN MQWs on non- and semi-polar GaN substrates, steps along the a-axis were observed by AFM. In particular on  GaN, undulations and undulation bunching appeared. Photoluminescence characterization indicated that In incorporation increased with the off-angle from the m-plane and also depended on the polarity. Source:IOPscience F...

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Analysis of the band alignment of highly strained indium-rich GaInNAs QWs on InP substrates

2019-04-29

The focus of this paper is to present the calculations of the band alignment of indium-rich (>53%) highly strained Ga1−xInxNyAs1−y quantum wells on InP substrates which allows an emission wavelength of the order of 2.3 µm. We concentrate on the band alignment of Ga0.22In0.78N0.01As0.99 wells lattice matched to In0.52Al0.48As barriers. Our calculations show that the incorporation of nitrogen into Ga1−xInxAs improves the band alignment significantly allowing Ga0.22In0.78N0.01As0.99/In0.52Al0.48As quantum wells on InP substrates to compete with the unique band alignment of GaInNAs/GaAs quantum wells on GaAs substrates. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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High-Performance InAs Quantum Well based Corbino Magnetoresistive Sensors on Germanium Substrates

2019-04-25

High-quality InAs/Al0.2Ga0.8Sb quantum well structures were grown on Germanium substrates by molecular beam epitaxy (MBE). Electron mobilities of 27,000 cm2/Vs for sheet concentrations of nS=1.8×1012 cm-2 were routinely achieved at room temperature for undoped InAs/Al0.2Ga0.8Sb quantum well structures on Germanium substrates. We developed a simple processing technology for the fabrication of Corbino magnetoresistive devices. Excellent current sensitivities of 195 Ω/T and voltage sensitivities of 2.35 T-1 at a magnetic field of 0.15 T were measured for Corbino shaped magnetoresistors on Germanium substrate at room temperature. This sensing performance is comparable to that obtained by identical sensors on GaAs substrate. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Structural and optical characterization of GaSb on Si (001) grown by Molecular Beam Epitaxy

2019-04-17

GaSb epilayers were grown on Si (001) using molecular beam epitaxy via AlSb quantum dots as an interfacial misfit (IMF) array between the Si substrates and GaSb epilayers. The effect of IMF array thickness, growth temperature and post annealing on the surface morphology, structural and optical properties of the GaSb on Si were investigated. Among five different IMF array thicknesses (5, 10, 20, 40 and 80 ML) that were used in this study, the best result was obtained from the sample with a 20 ML AlSb IMF array. Additionally, it was found that although the full width at half maximum (FWHM) and threading dislocation (TD) densities obtained from high resolution x-ray diffraction curves can be improved by increasing the growth temperature, a decrease in the photoluminescence (PL) signal and an increase in the surface roughness (RMS) emerged. On the other hand, the results indicate that by applying post annealing the GaSb epilayer crystal quality can be improved in terms of FWHM, TD density,...

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