qui nous sommes

en tant que fabricant principal de matériau semi-conducteur composé en Chine. pam-xiamen développe des technologies avancées de croissance cristalline et d'épitaxie, allant de la première génération de plaquettes de germanium, deuxième génération d'arséniure de gallium avec croissance de substrat et3
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après plus de 20 ans d'accumulation et de développement, notre entreprise a un avantage évident dans l'innovation technologique et le bassin de talents. à l'avenir, nous devons accélérer le rythme des actions concrètes pour fournir aux clients de meilleurs produits et services
docteur chan -PDG de xiamen powerway avancé matériel co., ltd

nos produits

laser bleu

gan templates

Les gabarits de pam-xiamen sont constitués de couches cristallines de nitrure de gallium (gan), de nitrure d'aluminium (aln), de nitrure d'aluminium gallium (algan) et de nitrure d'indium et de gallium (ingan) déposées sur des substrats de saphir, Les produits modèles en carbure de silicium ou silicium.pam-xiamen permettent des durées de cycle d'ép3

Gan sur silicium

substrat de gan autoportant

pam-xiamen a établi la technologie de fabrication de la plaquette de substrat gan (nitrure de gallium) autoportante, qui est pour uhb-led et ld. développé par la technologie d'épitaxie en phase vapeur (hvpe), notre substrat gan a une faible densité de défauts.

gaas cristal

galettes de gaas (arséniure de gallium)

pwam développe et fabrique des substrats semi-conducteurs composés de cristaux d'arséniure de gallium et wafer.we a utilisé une technologie avancée de croissance cristalline, congélation verticale gradient (vgf) et gaas gaufrage technologie de traitement, établi une ligne de production de croissance de cristal, de coupe, de broyage à polissage une 3

cristal de sic

sic épitaxie

nous fournissons une épitaxie sic sur film mince (carbure de silicium) sur des substrats de 6h ou 4h pour le développement de dispositifs en carbure de silicium. sic epi wafer est principalement utilisé pour les diodes schottky, les transistors à effet de champ à semi-conducteur à oxyde de métal, les transistors à effet de champ de jonction, les tr3

cristal de sic

substrat sic

pam-xiamen propose des plaquettes de carbure de silicium semi-conducteur, 6h sic et 4h sic dans différentes qualités pour le chercheur et les fabricants de l'industrie. nous avons développé la technologie de croissance de cristal de sic et la technologie de traitement de gaufrette de cristal de sic, établi une ligne de production au substrat sic fa3

gan expitaxy

gaufrette épitaxiale menée basée par gan

La plaquette épitaxiale à base de gan (nitrure de gallium) de pam-xiamen est destinée à l'application de diodes électroluminescentes bleues et vertes à très haute luminosité (led) et de diodes laser (ld).

gan hemt epitaxy

gaufrette épitaxiale de gan hemt

Les nitrures de gallium (gan) (transistors à haute mobilité d'électrons) sont la prochaine génération de transistors de puissance. Grâce à la technologie gan, pam-xiamen offre maintenant une plaquette algan / gan hemt epi sur saphir ou silicone, et algan / gan sur saphir .

cristal de sic

sic plaquette reclaim

pam-xiamen est en mesure d'offrir les services suivants de plaquettes de récupération de sic.

Pourquoi nous choisir

  • support technique gratuit et professionnel

    vous pouvez obtenir notre service de technologie libre de l'enquête à après service basé sur notre 25+ expériences dans la ligne de semi-conducteur.

  • bon service de vente

    notre objectif est de répondre à toutes vos exigences, peu importe comment les petites commandes et comment les questions difficiles ils peuvent être, pour maintenir une croissance soutenue et rentable pour chaque client grâce à nos produits qualifiés et un service satisfaisant.

  • 25+ années d'expériences

    avec plus de 25 + ans expériences Dans le domaine des matériaux semi-conducteurs composés et l'exportation, notre équipe peut vous assurer que nous pouvons comprendre vos besoins et traiter votre projet de manière professionnelle.

  • qualité fiable

    la qualité est notre première priorité. pam-xiamen a été iso9001: 2008 , possède et partage quatre facettes modernes qui peuvent fournir une gamme assez large de produits qualifiés pour répondre aux différents besoins de nos clients, et chaque commande doit être traitée par notre système de qualité 3

"Nous avons utilisé les wafers powerway epi pour certains de nos travaux. Nous sommes très impressionnés par la qualité de l'epi"
james s.speck, département des matériaux université de californie
2018-01-25
"chères équipes de pam-xiamen, merci pour l'avis de votre profession, le problème a été résolu, nous sommes si heureux d'être votre partenaire"
raman k. chauhan, seren photonique
2018-01-25
"merci pour la réponse rapide de mes questions et le prix concurrentiel, il est très utile pour nous, nous commanderons bientôt"
markus sieger, université d'ulm
2018-01-25
"Les plaquettes de carbure de silicium sont arrivées aujourd'hui, et nous en sommes vraiment ravis, bravo à votre équipe de production!"
dennis, université d'exeter
2018-01-25

les universités et les entreprises les plus célèbres du monde nous font confiance

dernières nouvelles

Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate

2019-09-29

We report on a type-II InAs/GaSb strained layer superlattice (SLS) photodetector (λ_{\rm cut\hbox{-}off}  ~4.3 µm at 77 K) with nBn design grown on a GaAs substrate using interfacial misfit dislocation arrays to minimize threading dislocations in the active region. At 77 K and 0.1 V of the applied bias, the dark current density was equal to 6 × 10−4 A cm−2 and the maximum specific detectivity D* was estimated to 1.2 × 1011 Jones (at 0 V). At 293 K, the zero-bias D* was found to be ~109 Jones which is comparable to the nBn InAs/GaSb SLS detector grown on the GaSb substrate. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Overview of recent direct wafer bonding advances and applications

2019-09-18

Direct wafer bonding processes are being increasingly used to achieve innovative stacking structures. Many of them have already been implemented in industrial applications. This article looks at direct bonding mechanisms, processes developed recently and trends. Homogeneous and heterogeneous bonded structures have been successfully achieved with various materials. Active, insulating or conductive materials have been widely investigated. This article gives an overview of Si and SiO2 direct wafer bonding processes and mechanisms, silicon-on-insulator type bonding, diverse material stacking and the transfer of devices. Direct bonding clearly enables the emergence and development of new applications, such as for microelectronics, microtechnologies, sensors, MEMs, optical devices, biotechnologies and 3D integration. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@g...

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Japanese Journal of Applied Physics logo A Novel Diffusion Resistant P-Base Region Implantation for Accumulation Mode 4H–SiC Epi-Channel Field Effect Transistor

2019-09-11

A novel implantation technique using the carbon (C) and boron (B) sequential implantation is employed to control the B lateral and vertical diffusion from the p-base region of the planar silicon carbide (SiC) epi-channel field effect transistor (ECFET). The current deep level transient spectroscopy measurements were performed to establish the inter-correlation between the B enhanced diffusion and the electrically active defects introduced by the C and B sequential implantation. It was found that the formation of deep defect level is completely suppressed for the same ratio (C:B=10:1) as that for the B diffusion in 4H–SiC. A diffusion mechanism which is correlated to the formation of D center was proposed to account for the experimentally observed B enhanced diffusion. The effectiveness of C and B implantation technique in suppressing the junction field effect transistor (JFET) pinch effect is clearly visible from the 3–4 fold increase in drain current of fabricated 4H–SiC ECFET for p-b...

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Adding a Bit of Artificiality Makes Graphene Real for Electronics

2019-08-28

 We believes that one of the electronic capabilities for this device could be selecting the strength of the spin-orbit coupling in a p-type GaAs quantum well. This could lead to the creation of a topological insulator, which is an insulator on the inside but a conductor on the outside. Such an insulator could in turn enable so-called topological quantum computation, which is a theoretical approach to quantum computing that could be far more robust than current methods. This capability does not exist in natural graphene or other artificial graphene systems. Source:.ieee For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method

2019-08-19

This paper reports two inch gallium nitride (GaN) substrates fabricated from bulk GaN crystals grown in the near equilibrium ammonothermal method. 2'' GaN wafers sliced from bulk GaN crystals have a full width half maximum of the 002 X-ray rocking curve of 50 arcsec or less, a dislocation density of mid-105 cm−2 or less, and an electron density of about 2 × 1019 cm−3. The high electron density is attributed to an oxygen impurity in the crystal. Through extensive surface preparation, the Ga surface of the wafer shows an atomic step structure. Additionally, removal of subsurface damage was confirmed with grazing angle X-ray rocking curve measurements from the 114 diffraction. High-power p–n diode structures were grown with metalorganic chemical vapor deposition. The fabricated devices showed a breakdown voltage of over 1200 V with sufficiently low series resistance. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at s...

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Enhancement of the quality of InAsSb epilayers using InAsSb graded and InSb buffer layers grown by hot wall epitaxy

2019-08-12

We have investigated the structural and electrical properties of InAsxSb1−x epilayers grown on GaAs(0 0 1) substrates by hot wall epitaxy. The epilayers were grown on an InAsSb graded layer and an InSb buffer layer. The arsenic composition (x) of the InAsxSb1−x epilayer was calculated using x-ray diffraction and found to be 0.5. The graded layers were grown with As temperature gradients of 2 and 0.5 °C min−1. The three-dimensional (3D) island growth due to the large lattice mismatch between InAsSb and GaAs was observed by scanning electron microscopy. As the thicknesses of the InAsSb graded layer and the InSb buffer layer are increased, a transition from 3D island growth to two-dimensional plateau-like growth is observed. The x-ray rocking curve measurements indicate that full-width at half-maximum values of the epilayers were decreased by using the graded and buffer layers. A dramatic enhancement of the electron mobility of the grown layers was observed by Hall effect measurements. So...

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Quality Variation of ZnSe Heteroepitaxial Layers Correlated with Nonuniformity in the GaAs Substrate Wafer

2019-08-06

ZnSe layers are grown heteroepitaxially on substrates cut from a LEC-grown, undoped semi-insulating GaAs(100) wafer along the diameter parallel to the [001] axis. The intensities of free-exciton photoluminescence and X-ray diffraction from the ZnSe layers show an M-shaped profile along the GaAs wafer diameter, and are inversely correlated with the etch-pit-density distribution of the GaAs wafer. This observation gives, for the first time, experimental evidence that the quality of ZnSe heteroepitaxial layers grown by recent epitaxial techniques can be limited by the quality of GaAs substrates. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Highly boron-doped germanium layers on Si(001) grown by carbon-mediated epitaxy

2019-07-29

Smooth and fully relaxed highly boron-doped germanium layers were grown directly on Si(001) substrates using carbon-mediated epitaxy. A doping level of  was measured by several methods. Using high-resolution x-ray diffraction we observed different lattice parameters for intrinsic and highly boron-doped samples. A lattice parameter of a Ge:B = 5.653 Å was calculated using the results obtained by reciprocal space mapping around the (113) reflection and the model of tetragonal distortion. The observed lattice contraction was adapted and brought in accordance with a theoretical model developed for ultra-highly boron-doped silicon. Raman spectroscopy was performed on the intrinsic and doped samples. A shift in the first order phonon scattering peak was observed and attributed to the high doping level. A doping level of  was calculated by comparison with literature. We also observed a difference between the intrinsic and doped sample in the range of second order phonon scattering. ...

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Epitaxial CdS Layers Deposited on InP Substrates

2019-07-22

The CdS layers were deposited on InP substrates by using the (H2–CdS) vapor growth technique. The single crystal layers of hexagonal CdS were obtained on InP (111), (110) and (100) with the following heteroepitaxial relationships; (0001) CdS//(111) InP and [bar 12bar 10] CdS//[01bar 1] InP, (01bar 13) CdS//(110) InP and [bar 2110] CdS//[bar 110] InP, (30bar 34) CdS//(100) InP and [bar 12bar 10] CdS//[01bar 1] InP. The CdS layers deposited on InP (bar 1bar 1bar 1) were identfied in terms of the twinned hexagonal crystals, twin planes of which were nearly parallel to (30bar 3bar 4) and its crystallographic equivalents. The compositional gradients were observed at the interface of the deposits and the substrates. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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Absorption and dispersion in undoped epitaxial GaSb layer

2019-07-16

In this paper, we present the results of a theoretical and experimental investigation into the refractive index and absorption, at room temperature, of a 4 μm-thick undoped epitaxial layer of GaSb deposited on a GaAs substrate. A theoretical formula for optical transmission through an etalon was derived, taking into account the finite coherence length of the light. This formula was used to analyse the measured transmission spectra. The refractive index was determined in a wide spectral range, between 0.105 eV and 0.715 eV. The absorption was determined for photon energies between 0.28 eV and 0.95 eV. An Urbach tail was observed in the absorption spectrum, as well as a constant increase in absorption in the spectral region above the band gap. Source:IOPscience For more information, please visit our website: www.semiconductorwafers.net, send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com

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